Silicon Carbide Refractory decks

Silicon carbide refractory decks are made of high-purity silicon carbide and ultra-fine powder by vibration molding and high-temperature sintering. They have the advantages of good high-temperature thermal conductivity and high-temperature load-bearing, and are suitable for various building ceramics, sanitary ceramics, household ceramics, electric porcelain refractories and powder metallurgy sintering furnaces.

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Description

Item Unit Index
Physical properties SIC Chemical composition≥ % 90
 
  Max. Service temp. 1550
  Refractoriness ≥ SK 39
  2kg/cm Refractoriness under load T2 ≥ 1750
  Modulus of rupture under room temp. ≥ kg/cm2 500
  Modulus of rupture at 1400℃≥ kg/cm2 550
  Compressive strength ≥ kg/cm2 1300
  Thermal expansion at 1000℃ % 0.42-0.48
  Apparent porosity % 7-8
  Bulk density g/cm3 2.70-2.75
  Thermal conductivity at1000 ℃ Kcal/m.hr.℃ 13.5-14.5
As to the above functional characteristics, they can be designed upon the customer’s request.

 

Keywords:

refractory ge cm2 kg rupture thermal at temp. refractoriness of

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